Langmuir探针对以SiCl_4/H_2低温沉积多晶硅薄膜过程的在线检测
摘要
利用等离子体增强化学气相沉积技术、以SiCl_4/H_2为源气体可以低温快速沉积高质量的多晶硅薄膜。采用加热可调谐Langmuir探针技术,研究了薄膜沉积过程中参与空间气相反应的电子特性——电子能量分布函数、电子平均能量和电子密度,并系统分析了影响多晶硅薄膜沉积的各工艺参数——射频功率、反应压强、氢流量和氢稀释度对电子特性的影响,并对实验结果进行了分析和讨论。
出处
《池州学院学报》
2015年第6期33-35,共3页
Journal of Chizhou University
基金
安徽省教育厅资助项目(AQKJ2014B019)
安庆师范学院青年科研基金资助的课题(044-K10025000031)
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