Sb_2S_3纳米粒子敏化ZnO微纳分级结构的光电化学性能

Photoelectrochemical properties of hierarchical ZnO micronanostructure sensitized with Sb_2S_3 nanoparticles

采用电化学沉积方法,选择聚乙二醇(PEG-400)和乙二胺(EDA)为添加剂,直接在ITO导电玻璃上制备了有序阵列的ZnO纳米棒,以及ZnO纳米棒上生长纳米棒微纳分级结构。采用化学浴沉积法均匀沉积Sb2S3纳米粒子,制备了Sb2S3/ZnO纳米棒壳核结构和Sb2S3/ZnO纳米棒上生长纳米棒分级壳核结构。利用扫描电子显微镜(SEM)、X射线衍射(XRD)、紫外-可见吸收光谱(UV-vis)、瞬态光电流等分析手段对其形貌、结构和光电化学性能进行了表征和测试。研究表明,Sb2S3/ZnO纳米棒上生长纳米棒分级壳核结构阵列膜的光电流明显高于Sb2S3/ZnO纳米棒壳核结构阵列。

By using electrochemical deposition method,and assisted with additions of PEG-400 and EDA,well-aligned ZnO nanorods and hierarchical ZnO micro-nanostructure are fabricated directly on indium doped tin oxide coated conducting glass（ITO）substrate.The shell-core Sb2S3/ZnO nanorod structure and the shell-core hierarchical Sb2S3/ZnO micro-nanostructure are prepared by chemical bath deposition method.SEM,XRD,UV-Vis and photocurrent test are used to characterize the morphology,nanostructures and their photoelectrochemical properties.The studies show that the photocurrent on the array membranes with shell-core hierarchical Sb2S3/ZnO micro-nanostructure is apparently higher than that with shell-core Sb2S3/ZnO nanorods array.