PbS/CdS量子点的制备及光电性能研究

Study of preparation and photoelectric property of PbS/CdS quantum dots

利用简单的连续离子沉积反应(SILAR)将PbS和CdS量子点(QDs)沉积到TiO2表面上。通过与仅沉积PbS量子点的敏化太阳电池对比,发现PbS/CdS和CdS/PbS量子点提高了电池的光电性能。通过改变PbS和CdS量子点的沉积顺序来研究量子点结构对电池的影响,发现这两种量子点结构中性能优越的是PbS/CdS,推测这种量子点的能带结构可能更有利于电子的注入和空穴的再生。

The PbS and CdS QDs were deposited on TiO2 by the facile Successive Ionic Layer Absorption and Reaction technique. Compared with single PbS sensitized cells, PbS/CdS quantum dots, used as photoelectrode in QDSSCs, improved the photovohaic performance of solar cell devices.The deposition of the two kind QDs was reversed to study the structure effect of the quantum dots on the device performance, finding that PbS/CdS was the proper order and the possible explanation is that the structure of the band edges favored the electron injection and the hole recovery.