碱腐蚀减薄硅片过程中少子寿命性质研究

In the process of alkali corrosion thinning silicon the nature of the minority carrier lifetime study

通过高频光电导法研究了超薄晶硅片少数载流子寿命的变化规律,分析了碱液腐蚀速率、表面缺陷态的变化对少子寿命的影响,得到:在现有的切片工艺条件下,腐蚀10分钟即可将表面损伤层完全去除,使超薄晶片显示出体内和表面寿命共同决定的较大少子寿命值.

By the high -frequency photoconductive decay method measurement of sihcon wafers to minority carrier lifetime, analysis of alkali corrosion rate, influence of surface defect states on the minority cartier life- time, Get： under the existing slicing process conditions, corrosion for lO minutes, the surface damage layer com- pletely removed, the ultrathin chip shows a large minority carrier lifetime value which is determined by both the body and the surface life.