摘要
在已经制作有埋层的衬底上生长外延层,为了控制图形畸变和漂移而选取了较高的工艺温度,导致了严重的自掺杂。通过对比实验探讨了常用的双层外延工艺和变温变掺杂流量工艺对于抑制自掺杂的效果。在一定的埋层掺杂浓度范围内,需要采用变温变掺杂流量工艺,才能使外延层纵向载流子浓度分布(SRP)满足器件要求。
High deposition temperature was applied to suppress pattern shift and distortion in the epitaxy process on buried Si substrate. However, auto doping was introduced because of the high deposition temperature. The comparison experimental results on suppressing auto doping were discussed between two epitaxy processes： two-step epitaxy and process by varying temperature and doping flow. Epitaxy Process by varying temperature and doping flow should be applied when the concentration of buried layer was in a certain range. The vertical carrier concentration profile （SRP） of corresponding epitaxy layer could satisfy the device demands.
出处
《电子与封装》
2016年第1期34-37,共4页
Electronics & Packaging
关键词
埋层外延
变温变掺杂流量
纵向载流子浓度分布(SRP)
buried-layer epitaxy
varying temperature varying doping flow
spreading resistance profiles （SRP）
