CVD金刚石薄膜的形核研究

Research on MW-CVD Diamond film Nucleation

实验采用10kW不锈钢谐振腔型微波等离子体化学气相沉积装置,在Mo、Ni、Fe 3种不同类型的异质衬底上进行了金刚石形核研究;实验中发现对衬底采取高温氢等离子体退火处理(处理条件为:微波功率3000W,工作气压8.0kPa,H2流量100sccm,基片温度约为900℃,处理时间为10～15min);以及在衬底上镀上复合过渡层的预处理方式能够抑制低温低气压条件下碳的石墨化趋向和提高膜、过渡层、衬底三者之间的结合力,进而可以有效地提高和改善金刚石膜的形核密度和质量。

The density and quality of microwave chemical vapor deposited CVD diamond film studied using Mo, Ni,Fe substrates. It is discover that by using high-power, high-temperature hydric plasma (3000W,air pressure is 8.0kPa,flux of H2 is 100sccm,900℃,disposing 10～15min) and by plating compound transitional layers on underlay, carbon to graphite reactions can be restrain, at low temperature and atmospheric pressure,and that the binding energy between the film and the substrate is improved. Invariably, the density and quality of nucleated diamond films are improved through microwave-plasma processing.