金刚石表面镀覆碳化硅的研究

Study on coating of SiC on diamond surface

采用硅粉与金刚石颗粒混合粉体为原料,通过高温热处理在金刚石表面镀覆SiC晶体,用XRD、SEM和EDS分析产物的物相组成与显微形貌,同时研究金刚石镀钛对金刚石表面涂覆SiC状态的影响。研究结果表明:采用硅粉和金刚石混合粉体为原料,高温1400℃处理后,在金刚石表面上形成了SiC,但并没有形成连续的涂层,同时金刚石发生一定程度的石墨化。选用镀钛金刚石后,在较低温度(1200℃),金刚石表面上会形成TiC和Ti3SiC2;当温度升高到1300℃时,金刚石表面形成TiC、Ti3SiC2和SiC;温度升高到1400℃时,金刚石表面镀覆了较厚的SiC和Ti3SiC2涂层。

SiC grains were coated on the surface of diamond by using high temperature thermal treatment method from Si and diamond mixed powders.The phase composition and microstructure of the products were studied by XRD,SEM and EDS.The effect of Ti coated diamond on the SiC coating status of diamond was also studied.The result showed that SiC were formed on the surface of diamond after heat treatment at 1400℃from Si and diamond mixed powders.However,continuous coating were not obtained,and diamond had certain graphitization.After Ti coated diamond was used,TiC and Ti3SiC2 grains were formed on the diamond at 1200 ℃.When the temperature reached 1300 ℃,TiC,Ti3SiC2 and SiC were formed.At 1400 ℃,Ti3SiC2 and SiC coating were obtained.