一种新型GaAs基无漏结隧穿场效应晶体管

A Novel GaAs-Based Tunnel Field-Effect Transistor Without Drain Junction

针对隧穿场效应晶体管开态电流较低的问题,提出了一种新型GaAs基无漏结隧穿场效应晶体管结构,并对其性能进行了研究。在该结构中,沟道和漏区采用具有相同掺杂浓度的N型InGaAs材料,实现沟道/漏区无结化,简化了制造工艺;同时为了提高开态隧穿电流,源区采用不同于沟道的P型GaAsSb材料,实现异质源区/沟道结构。该结构能有效增大关态隧穿势垒宽度,降低泄漏电流,同时增加开态带带隧穿概率,提升开态电流,从而获得低亚阈值斜率和高开关比。仿真结果表明,在0.4V工作电压下,该新型GaAs基无漏结隧穿场效应晶体管的开态电流为3.66mA,关态电流为4.35×10^(-13) A,开关电流比高达10^(10),平均亚阈值斜率为27mV/dec,漏致势垒降低效应值为126。

A novel GaAs-based tunnel field-effect transistor without drain junction is proposed to improve the on-state current and its performance is investigated.The transistor uses N-type InGaAs with the same doping concentration in the channel and drain to form junctionless channel/drain and to simplify the manufacture process,while P-type GaAsSb is used in the source to produce hetero junction source/channel and to increase the on-state current.The widened tunnel barrier in the off-state decreases the leakage current,and the promoted band-to-band tunneling probability in the on-state increases the driving current,so that both the low subthreshold slope and the high ratio between on-state current and off-state current are obtained.Numerical simulations show that the novel device achieves an on-state current of 3.66×10^-3 A,and an offstate current of 4.35×10^-13 A under 0.4Vvoltage,and the ratio between on-state current and off-state current is 10^10,and that an average subthreshold slope of 27mV/dec and a DIBL of 126 are obtained.