钛酸铋薄膜的磁控溅射及其退火处理

Preparation of Bismuth-Titanate Thin Films by Magnetron Sputtering and Annealing

采用射频磁控溅射技术,在Pt/Ti/SiO2/Si衬底上制备了钛酸铋(Bi4Ti3O12,简称BIT)薄膜。研究了衬底温度及后续退火处理对薄膜结构和表面形貌的影响。结果表明:适宜的衬底温度为200℃。随着退火温度(650~800℃)的升高,BIT薄膜的结晶性变好,晶粒尺寸增大,c轴取向增强。当退火温度达到850℃时,开始出现焦绿石相;700~800℃为适宜的退火温度,在此条件下得到的BIT薄膜结晶良好,尺寸均匀,表面平整致密。

Bismuth-titanate (Bi4Ti3O12,BIT) thin films were deposited on Pt/Ti/SiO2/Si substrates by RF magnetron sputtering followed by annealing. The effect of substrate temperature and annealing temperature on the crystal phase, structure and surface morphology of the films were studied. The optimum substrate temperature is found to be 200 ℃, and crystalline size and c-axis orientation of the films are increased with the increasing of annealing temperature (650~800 ℃), and the pyrochlore phase begin to appear when the annealing temperature is above 850 ℃. Single BIT thin films in perovskite phase with high-crystallinity are obtained at the optimum annealing temperature of 700~800 ℃, which show a smooth and dense surface.