退火氛围及温度对掺钛氧化铟薄膜光电性能的影响

Effect of Post-Annealing on Optical and Electrical Properties of ITiO Films Deposited by RF Magnetron Sputtering

利用磁控溅射法在室温下制备了掺钛的氧化铟薄膜,并将薄膜在氮气及真空两种氛围下进行退火。研究了退火氛围及温度对掺钛氧化铟薄膜的光电性能的影响。实验发现,氮气氛围下较低的退火温度能够部分提高薄膜的电学性能,随退火温度升高,薄膜的电学性能反而下降。与氮气氛围相比,真空下退火更有助于提高掺钛氧化铟薄膜的电子迁移率,并且随退火温度升高,电子迁移率逐渐升高并达到一个稳定值。真空退火处理后,掺钛氧化铟在可见光区域的透光率接近80%,在大于1100nm的长波谱区的透光率也有所增高,并且方块电阻降为10/□,适合作为太阳能电池的窗口材料。

Titanium-doped indium oxide (ITiO) films were deposited at room temperature by RF magnetron sputtering followed by post-annealing in vacuum and nitrogen atmosphere, respectively. Post-annealing in nitrogen and vacuum both could improve optical and electrical properties of ITiO films. However, electrical properties of ITiO films become worse after post-annealing at high temperature in nitrogen. Compared with post-annealing in nitrogen, vacuum annealing is more effective for improving the electrical properties of ITiO films. After vacuum post-annealing, the optical transmittance of 325-nm-thick ITiO films shows approximately 80% at wavelengths ranging from 530 nm to 1100 nm. Transmittance in wavelength longer than 1100 nm is also increased. The sheet resistance is decreased to 10 / and it is suitable to be used as TCO layer for solar cells.