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BPhen作为发光层间隔层对黄光OLED的影响 被引量:5

Effects of BPhen as Spacer Layer in Light Emitting Layer on Yellow OLED
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摘要 使用R-4B和GIrl作为磷光掺杂剂、CBP为主体、BPhen为发光层间隔层,制备了包含红、绿双发光层的黄色磷光OLED器件。器件结构为ITO/Mo O3(40 nm)/NPB(40 nm)/TCTA(10 nm)/CBP∶GIrl(14%)(20nm)/BPhen(x nm)/CBP∶R-4B(6%)(10 nm)/BCP(10 nm)/Alq3(40 nm)/Li F(1 nm)/Al(1 000 nm)。BPhen位于两发光层之间,具有调节载流子复合的功能,其中x为BPhen的厚度。通过调整x的值,研究了BPhen厚度对OLED器件发光性能的影响。实验结果表明,适当厚度的BPhen层可以提高器件的发光亮度和电流效率。BPhen厚度为6 nm的器件性能最佳,16 V驱动电压下的器件亮度最高可达11 270 cd/m2,最大电流效率为24.35 cd/A,而且绿光和红光波峰强度相近,黄光颜色纯正,色坐标趋近于(0.5,0.5)。 We prepared yellow phosphorescent OLED devices,which used R-4B,GIrl as the green phosphorescent dopant,CBP as the main body material. We investigated the BPhen as spacer layer between the red and green emitting layers to regulate currieries recombination. The device structure was ITO / Mo O3( 40 nm) /NPB( 40 nm) /TCTA( 10 nm) /CBP ∶ GIrl( 14%)( 20 nm) /BPhen( x nm) / CBP∶ R-4B( 6%)( 10 nm) / BCP( 10 nm) / Alq3( 40 nm) /Li F( 1 nm) /Al( 1 000 nm). In this structure,x referred to six different thickness of BPhen in the devices. We studied its luminescent properties and controlled its spectra by adjusting the thickness of BPhen. The results show that appropriate thickness of BPhen can improve the performance of the device. When the thickness of BPhen is 6 nm,the performance of the device is the optimum. The maximum brightness is 11 270 cd / m^2 at 16 V,and the maximum efficiency is 24. 35 cd / A. Meanwhile,the green and red peaks almost have the same intensity in the spectra which means the purest yellow of all devices,and the color coordinates close to( 0. 5,0. 5).
出处 《发光学报》 EI CAS CSCD 北大核心 2016年第1期38-43,共6页 Chinese Journal of Luminescence
基金 国家自然科学基金(61076066) 陕西省科技统筹创新工程计划(2011KTCQ01-09)资助项目
关键词 间隔层 BPhen 有机电致发光 space layer BPhen OLED
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  • 1袁桃利,张方辉,张微,黄晋.空穴传输层对有机电致发光器件性能的影响[J].发光学报,2013,34(11):1457-1461. 被引量:6
  • 2康明,谢克难,卢忠远,藤元成,戴亚堂,孙蓉,熊小利,许丕池.溶胶-凝胶法制备纳米级ZnO:Eu,Li红色荧光材料[J].四川大学学报(工程科学版),2005,37(1):65-68. 被引量:15
  • 3王治龙,王育华.红色蓄光材料Y_2O_2S∶Eu^(3+)的硫熔法制备及其发光性能[J].功能材料,2005,36(9):1328-1330. 被引量:7
  • 4吴空物,华玉林,朱飞剑,牛霞,吴晓明,印寿根,邓家春.以Zn(BTZ)_2∶rubrene为发光层的一种新型白色有机电致发光液晶显示背光源[J].液晶与显示,2005,20(5):417-421. 被引量:12
  • 5Sedat N, Hilmi V D. FOrster resonance energy transfer en- hanced color-conversion using colloidal semiconductor quantum dots for solid state lighting [J]. Appl Phys Lett, 2009, 95(15) :1511111-1511114.
  • 6Liu S,Yang J H,Gan Z Y, et al. Structural optimization of a microjet based cooling system for high power LEDs [J]. International Journal of Thermal Sciences, 2008, 47: 1086-1095.
  • 7He G X, Xu J, Yan H F. Spectral optimization of warm- white light-emitting diode lamp with both color rendering index (CRI) and special CRI of R9 above 90 [J]. AIP Ad- vances,2011,1(3) :0321601-0321607.
  • 8Han C M, Xie G H, Xu H, et al. A single phosphine oxide host for high-efficiency white organic light-emitting di- odes with extremely low operating voltages and reduced efficiency roll-off [J]. Adv Mater, 2011,23 : 2491-2496.
  • 9Weng C J. Advanced thermal enhancement and manage- ment of LED packages [J]. Heat and Mass Transfer, 2009,36 : 245-248.
  • 10Chen S M, Tan G P, Wong W Y, et al. White organic light-emitting diodes with evenly separated red, green and blue colors for efficiency/color-rendition trade-off optimi- zation EJ:. Adv Funct Mater,2011,21:3785-3793.

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  • 1袁桃利,张方辉,张微,黄晋.空穴传输层对有机电致发光器件性能的影响[J].发光学报,2013,34(11):1457-1461. 被引量:6
  • 2高强,尹勇明,于晶,纪永成,闻雪梅,刘士浩,谢文法.基于双极传输母体的高效有机磷光发光器件[J].发光学报,2014,35(6):717-721. 被引量:6
  • 3DENG Z, LEE S T, WEBB D P, et al. Carrier transport in thin films of organic electroluminescent materials[J]. Synthetic Metals, 1999, 107(2): 107-109.
  • 4GAO W Y, KAHN A. Electronic structure and current injection in zinc phthalocyanine doped with tetrafluorotetra- cyanoquinodimethane: Interface versus bulk effects[J]. Organic Electronics,2002, 3(2): 53-63.
  • 5KIDO J, MATSUMOTO T. Bright organic electroluminescent devices having a metal-doped electron-injecting layer [J]. Applied Physics Letters, 1998, 73(20): 2866-2868.
  • 6CHOUDHURY K R, YOON J, SO F. LiF as an n-dopant in tris (8-hydroxyquinoline) aluminum thin films[J] Advanced Materials, 2008, 20(8) : 1456-1461.
  • 7YOOK K S, JEON S O, JOO C W, et al. Air stable and low temperature evaporable LiaN as an type dopant in organic light emitting diodes[J]. Synthetic Metals, 2009, 159(15/16): 1664-1666.
  • 8CHEN M H, WU C I. The roles of thermally evaporated cesium carbonate to enhance the electron injection in or- ganic light emitting devices[J]. Journal of Applied Physics, 2008, 104 (11) : 113713.
  • 9YOOK K S, JEON S O, MIN S Y, et al. Highly efficient p-i-n and tandem organic light emitting devices using an air-stable and low-temperature-evaporable metal azide as an n-dopant[J]. Advanced Functional Materials, 2010, 20(11) : 1797-1802.
  • 10MA J W, XU W, JIANG X Y, et al. Organic light-emitting diodes based on new n-doped electron transport layer [J]. Synthetic Metals, 2008, 158(21/24): 810-814.

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