摘要
综述了半导体材料氮化镓(Ga N)抛光技术的发展,介绍了Ga N晶片化学机械平坦化(Chemical Mechanical Planarization,CMP)技术的研究现状,分析了CMP的原理和工艺参数对抛光的影响,指出了CMP亟待解决的技术和理论问题,并对其发展方向进行了展望。
The development of CMP technology for Ga N chip is described.The progress and problems of CMP for Ga N chip are reviewed in this paper.The theory of CMP for Ga N chip and the influence of technical parameters are discussed,then the future prospect of CMP is outlined.
出处
《电子工业专用设备》
2016年第1期10-14,共5页
Equipment for Electronic Products Manufacturing
关键词
GaN晶片
化学机械抛光
抛光工艺
GaN chip
CMP（Chemical mechanical planarization）
Process
