摘要
Indium oxide(In_2O_3) films were prepared on Al_2O_3(0001) substrates at 700 °C by metal-organic chemical vapor deposition(MOCVD).Then the samples were annealed at 800 °C,900 °C and 1 000 °C,respectively.The X-ray diffraction(XRD) analysis reveals that the samples were polycrystalline films before and after annealing treatment.Triangle or quadrangle grains can be observed,and the corner angle of the grains becomes smooth after annealing.The highest Hall mobility is obtained for the sample annealed at 900 °C with the value about 24.74 cm^2·V^(-1)·s^(-1).The average transmittance for the films in the visible range is over 90%.The optical band gaps of the samples are about 3.73 e V,3.71 e V,3.70 eV and 3.69 eV corresponding to the In_2O_3 films deposited at 700 °C and annealed at 800 °C,900 °C and 1 000 °C,respectively.
基金
supported by the National Natural Science Foundation of China(Nos.61274113
11204212 and 61404091)
the Program for New Century Excellent Talents in University(No.NCET-11-1064)
the Tianjin Natural Science Foundation(Nos.13JCYBJC15700
13JCZDJC26100
14JCZDJC31500 and 14JCQNJC00800)
the Tianjin Science and Technology Developmental Funds of Universities and Colleges(Nos.20100703
20130701 and 20130702)
