工艺腔室温度场轮廓特性分析及传热结构设计

Simulation of Temperature Profile and Design of Heat Transfer Structure for Reactor of Film Growth on Si-Wafer

反应腔室晶片表面温度分布是影响薄膜沉积均匀性的重要因素。本文以载有晶片的典型化学气相沉积反应腔室为研究对象,考虑了晶片与加热盘之间的微小间隙导致的低压下流固接触面的温度跳跃现象,建立了腔室温度仿真模型。通过模型和实验研究了腔室气压和气体流量对晶片表面温度分布的影响,并研究了温度分布轮廓的调节方法及传热结构设计。研究结果表明,晶圆表面平均温度随气压的增加而增加,随气体流量的增加而降低,晶片从中心到边缘温度分布轮廓存在下降的趋势。通过在加热盘和晶片之间加入阻抗介质,可以有效调节晶片表面温度分布轮廓。本文最后通过仿真手段,得到了能使晶片表面温度均匀分布的阻抗介质表面形状。本文的研究结果对指导腔室结构设计和工艺控制具有重要意义。

The temperature distributionin chemical vapor deposition（CVD） reactor,especially on the surfaces of the Si-wafer,was mathematically modeled,theoretically analyzed,numerically simulated,and experimentally evaluated.The influence of the realistic situation,including but not limited to the pressure,gas flow-rate,and low-pressure induced temperature-jump at the wafer/heater gap,on the temperature profile on Si-wafer surfaces was investigated.The simulated results show that the average temperature on Si-wafer surface increased with an increase of the pressure and/or with a decrease of the gas flow-rate,and that the temperature decreases in radial direction.Moreover,the geometry of the impedance ceramics was designed via simulation to improve the uniformity of temperature distribution on Si-wafer surface because its insertion into the Si-wafer/heater gap is capable of adjusting the temperature profile.We suggest that the simulated results be of some technological interest in design of CVD chamber and control of the film growth.