摘要
功率放大器(Power Amplifier,PA)是射频前端关键的模块,基于0.13μm SiGe HBT工艺,设计了一款38 GHz功率放大器。提出了HBT集电极寄生电容和传输线谐振的方法减小芯片面积,针对毫米波频段下,晶体管可获得最大增益较低,采用堆叠晶体管提高了功率放大器的增益,同时通过优化有源器件参数,提高了功率放大器的输出功率和效率。仿真结果显示,在4 V的供电电压下,工作在38 GHz的功率放大器1 dB压缩点输出功率为17.8 d Bm,功率增益为19.0 dB,功率附加效率为32.3%,功耗为252 mW。
Power Amplifier（PA） is an important unit in the RF front-ends. A 38 GHz power amplifier is designed based on 0. 13 μm SiGe HBT process. This paper proposed a method to decrease chip area. Due to the low maximum stable gain of transistors in millimeter wave frequency band, stacked HBT structure is utilized to improve power gain of the PA. High output power, gain, and efficiency are achieved by optimizing the active devices. The simulation results show that the PA achieves an output 1 dB compres-sion point power of 17. 8 d Bm, power gain of 19. 0 dB, power add efficiency（ PAE） of 32. 3 % at 1 dB compression point, and has252 mW power dissipation.
出处
《电子技术应用》
北大核心
2016年第2期36-38,45,共4页
Application of Electronic Technique
