摘要
1 Introduction Ⅲ-nitride wide bandgap semiconductors, such as GaN, InN, AIN and their ternary or quaternary alloy components, are wholly-component direct band gap materials with a full adjustable band gap （0.63-6.2eV）, strong polarization, high temperature resistant, anti-radiation, and can be achieved with low-dimensional quantum structures. Furthermore, it is the only one semiconductor material system that covers ultraviolet to infrared wavelength band. Therefore, a lot of attention has been paid to them. Through unremitting efforts, blue-green light-emitting diodes （LEDs） based on InGaN/GaN quantum well materials with low in composition have been developed and successfully industrialized. Their applications in the fields of the solid-state lighting and flat-panel displays are profoundly changing people＇s lives. In addition, high power electron mobility transistor devices （HEMT） based on low A1 content AIGaN/GaN heterostructure have significant applications in the fields of X-band radar and civilian communications~ which is profoundly affecting the national security situation and the world＇s strategic pattern.
1 Introduction Ⅲ-nitride wide bandgap semiconductors, such as GaN, InN, AIN and their ternary or quaternary alloy components, are wholly-component direct band gap materials with a full adjustable band gap （0.63-6.2eV）, strong polarization, high temperature resistant, anti-radiation, and can be achieved with low-dimensional quantum structures. Furthermore, it is the only one semiconductor material system that covers ultraviolet to infrared wavelength band. Therefore, a lot of attention has been paid to them. Through unremitting efforts, blue-green light-emitting diodes （LEDs） based on InGaN/GaN quantum well materials with low in composition have been developed and successfully industrialized. Their applications in the fields of the solid-state lighting and flat-panel displays are profoundly changing people＇s lives. In addition, high power electron mobility transistor devices （HEMT） based on low A1 content AIGaN/GaN heterostructure have significant applications in the fields of X-band radar and civilian communications~ which is profoundly affecting the national security situation and the world＇s strategic pattern.
