摘要
We design and fabricate a parallel system with 10 high speed side-illuminated evanescently coupled waveguide photodetectors （ECPDs）. The 10 ECPDs exhibit a uniform 3dB bandwidth of 20 GHz and low dark current of about i nA at 2 V reverse bias. The 10 ECPDs also exhibit uniform photo-responsivity of about 0.23A/W with an active region of 5 × 25μmS. The photodetector array has a total bandwidth of more than 200 GHz and can be integrated with other optoelectronic devices.
We design and fabricate a parallel system with 10 high speed side-illuminated evanescently coupled waveguide photodetectors （ECPDs）. The 10 ECPDs exhibit a uniform 3dB bandwidth of 20 GHz and low dark current of about i nA at 2 V reverse bias. The 10 ECPDs also exhibit uniform photo-responsivity of about 0.23A/W with an active region of 5 × 25μmS. The photodetector array has a total bandwidth of more than 200 GHz and can be integrated with other optoelectronic devices.
基金
Supported by the High-Tech Research and Development Program of China under Grant Nos 2013AA031401,2015AA016902 and 2015AA016904
the National Natural Science Foundation of China under Grant Nos 61176053,61274069 and 61435002
the National Basic Research Program of China under Grant No 2012CB933503
