摘要
This letter proposes a novel IGBT structure with an n-type barrier （NB-IGBT） formed on the silicon surface to enhance the conductivity modulation effect with a relatively simple fabrication process. TCAD simulation indicates that the NB-IGBT offers a current density 49% higher and turn-off losses 25% lower than a conventional field-stop IGBT （FS-IGBT） with a similar breakdown voltage, turn-off time and avalanche energy. Furthermore, the NB-IGBT exhibits extremely large transconductance, which is favorable to turn-on and turn-off. Therefore, the proposed IGBT offers an attractive option for high-voltage and large-power electronics applications.
This letter proposes a novel IGBT structure with an n-type barrier （NB-IGBT） formed on the silicon surface to enhance the conductivity modulation effect with a relatively simple fabrication process. TCAD simulation indicates that the NB-IGBT offers a current density 49% higher and turn-off losses 25% lower than a conventional field-stop IGBT （FS-IGBT） with a similar breakdown voltage, turn-off time and avalanche energy. Furthermore, the NB-IGBT exhibits extremely large transconductance, which is favorable to turn-on and turn-off. Therefore, the proposed IGBT offers an attractive option for high-voltage and large-power electronics applications.
基金
supported by the National High Technology Research and Development Program of China(No.2014AA052601)
the National Natural Science Foundation of China(No.51277060)
