摘要
This paper describes an S-band wideband high efficiency power amplifier based on the Nanjing Electron Device Institute＇s Ga As p HEMT monolithic microwave integrated circuit（MMIC） technology. To realize high efficiency, the two stage power amplifier is designed with a driver ratio of 1 ： 8. The low-pass filter/high-pass filter combined matching circuit is applied to the amplifier to reduce the chip size, as well as to realize the optimum impedances over a wide bandwidth for high efficiency at each stage. Biased at class AB under a drain supply voltage of 5 V, the amplifier delivers 33–34 dBm saturated output power across the frequency range of 1.8 to 3GHz with associated power-added efficiency of 35%–45% and very flat power gain of 25–26 dB in CW mode. The size of this MMIC is very compact with 2.72.75 mm^2.
This paper describes an S-band wideband high efficiency power amplifier based on the Nanjing Electron Device Institute＇s Ga As p HEMT monolithic microwave integrated circuit（MMIC） technology. To realize high efficiency, the two stage power amplifier is designed with a driver ratio of 1 ： 8. The low-pass filter/high-pass filter combined matching circuit is applied to the amplifier to reduce the chip size, as well as to realize the optimum impedances over a wide bandwidth for high efficiency at each stage. Biased at class AB under a drain supply voltage of 5 V, the amplifier delivers 33–34 dBm saturated output power across the frequency range of 1.8 to 3GHz with associated power-added efficiency of 35%–45% and very flat power gain of 25–26 dB in CW mode. The size of this MMIC is very compact with 2.72.75 mm^2.
