黑硅微结构光敏二极管

Black Silicon Microstructure Photodiodes

与平面硅相比,黑硅对0.25～2.5μm波长光具有高吸收特性。为了提高硅光敏二极管的近红外灵敏度和响应时间,采用金属辅助刻蚀在光敏二极管探测器背面制作了黑硅微结构。在1 064nm波长,探测器红外响应达到0.518A/W,比常规探测器量子效率提高了65%。

Black silicon shows higher absorption in 0.25～2.5μm wavelength range as compared to flat silicon.To improve NIR sensitivity and response speed of silicon photodiodes,an metal-assisted chemical etching（MCE）was used to form ＂black silicon＂microstructures on the backside surface of photodiodes.At 1 064 nm,the photoresponsivity of the photodiodes reaches up to 0.518A/W and the quantum efficiency is 65% higher than that of conventional diodes.