MEMS静电驱动器的场致电子发射效应研究

Study on Field Electron Emission Effect of MEMS Electrostatic Actuators

为研究MEMS静电驱动器的场电子发射效应,设计并加工了排斥驱动器和平行板驱动器两种不同结构的静电驱动器,实验测试了电极间漏电流随驱动电压的变化关系,验证了其满足场发射效应的FN理论公式,从而首次观察到静电排斥驱动器的场致电子发射效应。根据测试结果计算得到了所设计的两种MEMS静电驱动器的名义发射面积和场增强因子。由于器件自身的结构设计特征,平行板驱动器相对于排斥驱动器具有更大的名义发射面积和更小的场增强因子。

The field electron emission effect is an important factor that limits the reliability of micro and nano opto-electro-mechanical devices.To study the field electron emission effect of MEMS electrostatic actuator,two different actuators including repulsive actuator and parallelplate actuator,are designed and fabricated.Through experimental measurement,the relationship between leakage current and voltage of electrodes satisfies the FN formula,and the field electron emission effect of electrostatic repulsive actuators is firstly found.The effective emitting area and field enhancement factor are computed based on the measurement results of the two actuators.Due to the structure characteristic,the parallel-plate actuator has larger notional emitting area and smaller field enhancement factor than repulsive actuator.