摘要
根据量子统计理论,结合材料的晶格结构和能带特点,研究了半导体材料电子态的微观结构及非平衡载流子的量子统计分布特性;分析了电子-声子相互作用的微观状态和弛豫过程,对强电场作用下非平衡载流子的分布函数、弛豫过程及输运过程的非线性特性和瞬态特性进行了研究,揭示出非平衡载流子的微观相互作用及瞬态输运机理。
According to the quantum statistical theory,combining with the lattice structure of material and band characteristics,a detailed study was performed on the microstructure of electronic states of semiconductor material and the quantum statistical distribution characteristics of non-equilibrium carriers.The microstate and relaxation process of the electron-phonon interactions were analyzed. The nonlinear characteristics and transient characteristics of distribution function,relaxation process and transport process of non-equilibrium hot electrons under high electric field were studied,and the microscopic interactions and transient transport mechanism of non-balanced hot electrons were revealed.
出处
《半导体光电》
CAS
北大核心
2015年第6期942-945,共4页
Semiconductor Optoelectronics
基金
陕西省自然科学基金项目(2013JM8013)
渭南师范学院特色学科建设项目(14TSXK06)
关键词
强电场
载流子
弛豫过程
输运过程
high electric field
carrier
relaxation process
transport process
