沉积温度对AZO薄膜性能的影响

Effect of Deposition Temperature on the Properties of AZO Thin Films

在采用直流磁控溅射制备AZO(Aluminum Doped Zinc Oxide,掺铝氧化锌)薄膜的过程中,AZO薄膜的光电性能取决于镀膜过程中的各种工艺参数,包括溅射气压、沉积温度、溅射功率和靶基距等。本文主要研究在固定其它工艺参数不变的情况下,通过改变沉积温度在不同的温度下分别制备AZO薄膜,利用SEM、X射线衍射仪等测试不同AZO薄膜的微观结构,并分析研究不同沉积温度下制备AZO薄膜光电性能及结构的变化特性,以筛选出制备高质量AZO膜的最佳沉积温度。

When AZO films were prepared by DC magnetron sputtering method,its photoelectric properties were dependent on the parameters of coating process including the film forming temperature,sputtering pressure,sputtering power,target substrate distance etc.. By keeping the other processing parameters to be constant the AZO films were prepared at various membrane deposition temperatures at200 ℃,250 ℃,300 ℃,350 ℃,400 ℃,500 ℃ in this work,respectively. Through the investigation of the effect of deposition temperature on photoelectric properties and structure of AZO thin films,the optimum deposition temperature for preparing high quality of AZO films was determined.