两种测定难熔单晶晶面偏离角方法的对比

Comparison on Two Measuring Methods of Crystal Plane Orientation Deviation Angle of Refractory Monocrystals

单晶晶面偏离角的测定是单晶生长和加工过程中的重要环节,通过试验比较研究了两种测定难熔单晶晶面偏离角方法的优缺点。结果表明:在试样高速旋转同时对试样进行固定2θ角扫描的θ扫描方法,能够快速准确地测定出偏离角,测定效率高,完全可以满足现阶段单晶生产过程中对晶面偏离角测定的要求。而另一种方法是由(ω,φ)二维数据确定出晶面偏离角和晶面方位,但该方法测试时间过长,效率低下。

It was of great importance to measure the crystal plane orientation deviation angle of refractory monocrystals during the growth and fabrication process. The advantages and disadvantages of two measuring methods of the orientation deviation angle of refractory monocrystals were compared and analyzed through experiments. The results show that the crystallographic orientation angle could be accurately and effectively measured by θ scanning method of scanning samples with the fixed 2θ angle during high-speed rotating. It could satisfy the measuring needs on orientation deviation angle of monocrystals in practical monocrystal fabrication. The orientation deviation angle and the crystallographic orientation could also be measured by another method through two-dimensional data（ ω,φ）. But in this method the measuring time was too long and the efficiency was too low.