摘要
铝栅化学机械平坦化(CMP)是实现高k介质/金属栅结构的关键技术,决定了芯片上器件性能的完整性、可靠性。针对铝的特性,以质量传递和温度传递理论作为依据,采用控制化学作用与机械作用相平衡的平坦化技术路线,研究碱性条件下铝栅化学机械抛光工艺参数对铝栅表面粗糙度的影响,以此确定铝栅粗抛过程的工艺参数。实验结果表明铝栅粗抛过程所需最优化工艺参数为:抛光头转速50 r/min,抛光液流量150 mL/min,抛光时间180 s,抛光机下压力3.0 psi(1 psi=6 895 Pa),此时原子力显微镜观察到的铝表面状态最好,表面粗糙度为2.08 nm,达到了较好的抛光效果。
CMP for the Al gate is the key technology for realizing the high kdielectric/metal gate structure,has the crucial influence on the integrated performance and reliability of the devices.According to the characteristics of Al,on the basis of the mass transfer and temperature transfer theories,the planarization technology route which can balance the chemical function and mechanical function was used,the effects of the process parameters for the Al gate CMP on the surface roughness of Al gate in the alkaline slurry were studied,and the process parameters of the Al gate polishing were determined.The experimental results show that the optimum process parameters include the polishing head rotational speed of 50 r/min,the slurry flow of 150 mL/min,the polishing time of 180 s and the polisher pressure of 3 psi（1 psi=6 895 Pa）.Thus,the Al surface state is best through observing with the atomic force microscopy,the surface roughness is2.08 nm,and achieving agood polishing effect.
出处
《微纳电子技术》
北大核心
2016年第1期54-59,共6页
Micronanoelectronic Technology
基金
国家中长期科技发展规划02科技重大专项资助项目(2009ZX02308-003
2014ZX02301003-007)
河北省教育厅基金资助项目(QN2014208)
关键词
铝栅
碱性抛光液
化学机械平坦化(CMP)
粗糙度
抛光工艺
Al gate
alkaline slurry
chemical mechanical planarization（CMP）
surface roughness
polishing process
