摘要
运用低温氧等离子体对化学气相沉积法生长的单层石墨烯进行处理,通过拉曼光谱仪和X射线光电子能谱仪来表征处理前后的变化,重点探讨了低温氧等离子体处理对单层石墨烯微观结构的影响。在拉曼光谱中,处理后的石墨烯出现了明显的D峰和D′峰,同时G峰和2D峰也出现了明显的退化,而G峰峰位右移,2D峰峰位左移。通过X射线光电子能谱表征,表明处理后向石墨烯中引入了较多的官能团。利用原子力显微镜研究了处理前后SiO_2/Si基底上石墨烯的表面形貌,发现低温氧等离子体处理后石墨烯表面高度明显增加,同时褶皱减少。
Single layer graphene prepared by chemical vapor deposition(CVD) was treated by low temperature oxygen plasma. Raman spectrometer and X-ray photoelectron spectroscopy(XPS) were used to characterize the changes before and after the treatment. And then the effects on microstructure were discussed. Significantly enhanced D-band, D′-band and decreased 2D-band were found in the Raman spectra, and right shift occurred to G-band and left shift occurred to 2D-band after the low temperature oxygen plasma treatment. In the XPS, it was found that numerous functional groups were introduced into the graphene after the low temperature oxygen plasma treatment. The surface morphology of single layer graphene transferred onto SiO2/Si substrate was studied with atomic force microscope(AFM). It is found that the surface of graphene is very easy to adsorb impurities after the low temperature oxygen plasma treatment.
出处
《电子元件与材料》
CAS
CSCD
2016年第2期9-13,共5页
Electronic Components And Materials
基金
国家自然科学基金资助(No.51175238)
江苏省"六大人才高峰"高层次人才选拔培养项目资助(No.ZBZZ-031)
江苏高校优势学科建设工程项目