摘要
从谐振腔和半导体增益介质的角度介绍了光泵浦外腔面发射半导体激光器的基本结构,评述了国内外在该领域的最新研究进展,探讨了该类型激光器在大功率、小型化技术方面的发展前景。
The basic structure of optical pumped vertical external cavity surface emitting semiconductor laser( OPVECSEL) was introduced from resonant cavity and semiconductor gain medium. The latest development of OP-VECSEL was reviewed. The development prospect of this laser was discussed in high power and miniaturization.
出处
《激光与红外》
CAS
CSCD
北大核心
2016年第2期127-131,共5页
Laser & Infrared