控制器组件γ瞬时辐射效应研究

Transient ionizing radiation effects of electrocircuit system

瞬时电离辐射在电子器件内部形成的光电流可引起器件输出扰动,导致电路中部分器件受电源、输入信号及自身产生光电流扰动的多重影响,而单独对器件进行试验无法反映γ瞬时辐射输出扰动在电子组件系统中的传递影响.为此对由DC/DC、稳压器、单片机CPU,FPGA 等组成的控制器组件在2.8×10^5-1.7×10^7Gy（Si）/s的范围内开展了γ瞬时辐射效应的试验研究.试验中对组件功能和器件参数的测试结果表明,在较小的瞬时剂量率下,部分器件输出受到影响,但组件功能正常;较大剂量率时,所有器件均受影响,且组件功能中断.同时观测到瞬时辐射形成的扰动信号在器件间传输现象.

When the devices are irradiated with the system at the transientγdose rate,many of them will work at the state that all of the input signal,power supply and the photocurrent are out of the designed state.This transient effects can not be found by irradiating the device only.So transient radiation effects withγ-ray on an electronics system,composed of DC/DC,CPU,FPGA,et al,were investigated.The gamma pulse width was 20 ns and the dose rate was in the range of 2.8×10~5 to 1.7×10~7 Gy(Si)/s in the experimental study.And the function of the system and many parameters of the main devices were tested.The result of experiments showed that some of the test devices were disrupted by low level of transientγradiation,but the system work was not disturbed.While the dose rates increased,all of the devices were disrupted and the system function failed.The signal originating from the transient ionizing radiation transferring from the input to the output of the device was observed.