外加条件对量子点红外探测器暗电流特性的影响

Influence of the Preset Condition on the Quantum Dot Infrared Photodetectors Dark Current Characteristics

考虑微米尺度和纳米尺度下电子传输对激发能的共同影响,基于电子漂移速度对外加电场的依赖,研究外加电场和外加温度对量子点红外探测器暗电流特性的影响.结果表明：外加电场在0~25kV/cm范围内时,暗电流模型和实验数据变化相吻合.暗电流随着外加电场的增加而增加,并且当外加电场小于6kV/cm时暗电流增加迅速,而当外加电场大于6kV/cm时暗电流增加缓慢.暗电流随着外加温度的增加迅速增加.该研究为量子点红外探测器的优化设计和性能提高提供了理论参考.

The influence of the applied electric field and temperature on the dark current of quantum dot infrared photodetectors （QDIPs） was simulated and analyzed, which is based on the dark current model including the common influence of the microscale and the nanoscale electron transport as well as the dependence of the drift velocity of electrons on the applied electric field. The results show that the dark current model has an excellent agreement with the experimental data at 0 ~ 25 kV/cm applied electric field. The increasing of the dark current goes with the rise of the applied electric field, and the dark current increases rapidly below about 6 kV/cm, but it increases slowly above about 6 kV/cm. The rapid increase of the clark current goes with the increase of the temperature. The research can provide the theoretical reference in the optimization of the device design and the improvement of the performance of the quantum dot infrared photodetectors.