摘要
Binding energies of excitons in GaAs films on AlxGal-xAs substrates are studied theoretically with the fractional- dimensional approach. In this approach, the real anisotropic ＂exciton ＋ film＂ semiconductor system is mapped into an effective fractional-dimensional isotropic space. For different aluminum concentrations and substrate thicknesses, the exci- ton binding energies are obtained as a function of the film thickness. The numerical results show that, for different aluminum concentrations and substrate thicknesses, the exciton binding energies in GaAs films on AlxGal_xAs substrates all exhibit their maxima with increasing film thickness. It is also shown that the binding energies of heavy-hole and light-hole excitons both have their maxima with increasing film thickness.
Binding energies of excitons in GaAs films on AlxGal-xAs substrates are studied theoretically with the fractional- dimensional approach. In this approach, the real anisotropic ＂exciton ＋ film＂ semiconductor system is mapped into an effective fractional-dimensional isotropic space. For different aluminum concentrations and substrate thicknesses, the exci- ton binding energies are obtained as a function of the film thickness. The numerical results show that, for different aluminum concentrations and substrate thicknesses, the exciton binding energies in GaAs films on AlxGal_xAs substrates all exhibit their maxima with increasing film thickness. It is also shown that the binding energies of heavy-hole and light-hole excitons both have their maxima with increasing film thickness.
基金
Project supported by the National Natural Science Foundation of China(Grant No.11304011)
the Fundamental Research Funds for the Central Universitie China
