摘要
This letter proposes a high-conductivity insulated gate bipolar transistor （HC-IGBT） with Schottky con- tact formed on the p-base, which forms a hole barrier at the p-base side to enhance the conductivity modulation effect. TCAD simulation shows that the HC-IGBT provides a current density increase by 53% and turn-off losses decrease by 27% when compared to a conventional field-stop IGBT （FS-IGBT）. Hence, the proposed IGBT exhibits superior electrical performance for high-efficiency power electronic systems.
This letter proposes a high-conductivity insulated gate bipolar transistor （HC-IGBT） with Schottky con- tact formed on the p-base, which forms a hole barrier at the p-base side to enhance the conductivity modulation effect. TCAD simulation shows that the HC-IGBT provides a current density increase by 53% and turn-off losses decrease by 27% when compared to a conventional field-stop IGBT （FS-IGBT）. Hence, the proposed IGBT exhibits superior electrical performance for high-efficiency power electronic systems.
基金
supported by the National High Technology Research and Development Program of China(No.2014AA052601)
the National Natural Science Foundation of China(No.51277060)
