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The effect of nitridation and sulfur passivation for In0.53Ga0.47As surfaces on their Al/Al2O3/InGaAs MOS capacitors properties

The effect of nitridation and sulfur passivation for In_(0.53)Ga_(0.47)As surfaces on their Al/Al_2O_3/InGaAs MOS capacitors properties
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摘要 The impact of nitridation and sulfur passivation for Ino.s3Gao.47As surfaces on the A1/A1203/InGaAs MOS capacitors properties was investigated by comparing the characteristics of frequency dispersion and hysteresis, calculating the Dit and ANbt values, and analyzing the interface traps and the leakage current. The results showed that both of the methods could form a passivation-layer on the InGaAs surface. The samples treated by N2 plasma could obtain good interface properties with the smallest frequency dispersion in the accumulation region, and the best hysteresis characteristics and good I-V properties were presented. Also the samples with （NH4）ESx treatment showed the smallest frequency dispersion near the flat-band region and a minimum Dit value of 2.6 x10^11 cm-2 eV-1. The impact of nitridation and sulfur passivation for Ino.s3Gao.47As surfaces on the A1/A1203/InGaAs MOS capacitors properties was investigated by comparing the characteristics of frequency dispersion and hysteresis, calculating the Dit and ANbt values, and analyzing the interface traps and the leakage current. The results showed that both of the methods could form a passivation-layer on the InGaAs surface. The samples treated by N2 plasma could obtain good interface properties with the smallest frequency dispersion in the accumulation region, and the best hysteresis characteristics and good I-V properties were presented. Also the samples with （NH4）ESx treatment showed the smallest frequency dispersion near the flat-band region and a minimum Dit value of 2.6 x10^11 cm-2 eV-1.
作者 林子曾 曹明民 王盛凯 李琦 肖功利 高喜 刘洪刚 李海鸥
机构地区 Guangxi Experiment Center of Information Science Microwave Device and IC Department
出处 《Journal of Semiconductors》 EI CAS CSCD 2016年第2期155-159,共5页 半导体学报（英文版）
基金 supported by the National Natural Science Foundation of China(Nos.61274077,61474031,61464003) the Guangxi Natural Science Foundation(Nos.2013GXNSFGA019003,2013GXNSFAA019335) the Project(No.9140C140101140C14069) the Innovation Project of GUET Graduate Education(No.YJCXS201529) the National Science&Technology Major Project of China(No.2011ZX02708-003)
关键词 N2 plasma （NH4）2Sx treatment interface properties MOS capacitors N2 plasma （NH4）2Sx treatment interface properties MOS capacitors
分类号 TM53 [电气工程—电器] TN304.23 [电子电信—物理电子学]
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参考文献19

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Journal of Semiconductors
2016年 第2期

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