电荷耦合内透明集电极IGBT设计与仿真

Design and Simulation of Charge Coupled Internal Transparent Collector-IGBT

针对沟槽型绝缘栅双极型晶体管(IGBT)栅电容较大、开关速度较慢的问题,基于内透明集电极(ITC)技术,将电荷耦合(CC)的思想应用于槽栅IGBT中。采用仿真工具MEDICI对电荷耦合内透明集电极IGBT(CC-ITC-IGBT)的击穿特性、导通特性和开关特性等进行了仿真研究,重点研究了电荷耦合区掺杂浓度和局域载流子寿命控制区(LCLC)载流子寿命对器件性能的影响,并和普通的槽栅内透明集电极IGBT进行了对比。结果表明,在给定的参数范围内,新结构在快速关断区域折中特性曲线更好,在低导通压降区域,优势变得不太明显,因而电荷耦合内透明集电极IGBT更适合做快速关断型。

Aiming at the problem that the gate capacitance is bigger and the switching speed is slo- wer in the trench insulated gate bipolar transistor （IGBT） , the idea of coupled charge （CC） was applied to the trench gate IGBT based on the internal transparent collector （ITC） technology. By simulation tool MEDICI, the breakdown, conducting and switching characteristics of the CC-ITC-IGBT were simulated, especially the effects of the doping concentration of charge coupled area and the lifetime in local carrier li- fetime control （LCLC） area on the performances of the device were studied and compared with conven- tional trench ITC-IGBT. The results show that within the given parameters, the IGBT with the new struc- ture has a better trade-off characteristic curve, particularly in fast speed application, and the advantages are less obvious in the on-state voltage. Therefore the charge coupled internal transparent collector IGBT is more suitable for fast shut off.