N极性GaN/AlGaN异质结和场效应晶体管（英文）

N-Polar GaN/AlGaN Heterostructures and Field Effect Transistors

由于晶格的反转和随之而来的极化场的反转,N极性面氮化物材料已经成为微波功率器件应用的理想材料之一。在2英寸(1英寸=2.54cm)偏角度4H-SiC衬底上通过金属有机物化学气相沉积(MOCVD)的方法生长了N极性面GaN/AlGaN异质结材料,使用X射线衍射仪(HR-XRD)、原子力显微镜(AFM)、Raman光谱仪和扫描电子显微镜(SEM)等对材料进行了表征。结果表明,N极性面GaN/AlGaN异质结材料的二维电子气面密度和迁移率分别为0.92×1013cm^(-2)和1035cm^2/(V·s)。制备了N极性GaN/AlGaN异质结场效应晶体管(HFET)。测试结果表明,1μm栅长的n极性面GaN/AlGa NHFET器件峰值跨导为88.9mS/mm,峰值电流为128mA/mm。

Due to the inverse of lattice structure and consequent inverse of polarization field, The N- polar III-Nitrides have been one of the most promising materials for microwave power devices. N-polar GaN/A1GaN heterostructures were grown on 2-inch （ 1 inch = 2.54 cm） vicinal 4H-SiC substrates by metal organic chemical vapor deposition （MOCVD）. The crystalline information of the heterostructure material was determined by high-resolution X-ray diffraction （HR-XRD） , atom force microscopy （AFM） , Raman spectra and scanning electron microscopy （SEM）. The results show that the N-polar GaN/A1GaN heterostructure material exhibits the two-dimensional electron gas sheet density of 0.92 × 10^13 cm^-2 and a mobility of 1 035 cm2/ （V · s）, respectively. The N-polar GaN/A1GaN heterostructure field effect transistors （HFETs） were also fabricated. The test results show that the peak transconductance of N-polar GaN/A1GaN HFETs with the gate length of 1 μm is 88. 9 mS/mm, and the peak drain current is 128 mA/mm.