摘要
GaAs PHEMT低噪声放大器高温电老炼试验过程中存在电流先减小后部分恢复的现象。基于内部气氛检测结果和电路结构分析,认为低噪声放大器电流变化是氢气氛下其内部GaAs场效应晶体管(FET)性能发生退化所导致。因低噪声放大器芯片电路结构特点不能对内部FET直接进行参数测试,为进一步研究GaAs FET的氢效应作用机理,对GaAs FET结构单元开展高温电老炼试验,试验过程中GaAs FET电流变化趋势与低噪声放大器相同。分析了GaAs FET结构单元试验过程中饱和漏电流、夹断电压变化趋势,认为导致GaAs FET电参数先减小是由于沟道二维电子气(2DEG)浓度减小和栅金属与GaAs界面状态改变两种机理共同作用,电参数部分恢复主要是栅金属与GaAs界面状态改变起作用。
The current of GaAs PHEMT low noise amplifier decreased firstly then recovered partially during high temperature burn-in experiment. Based on the results of the internal atmosphere test and analysis of the circuit configuration, the reason of current change of the low-noise amplifier was that the performance of the GaAs field effect transistor （FET） degraded GaAs FET could not be directly tested because of the in hydrogen atmosphere. The parameters of the internal circuit structure features of the low-noise amplifier chip. To further study the hydrogen effects mechanism in GaAs FET, the GaAs FETs were carried out high temperaure burn-in experiment. Current variation trend of the GaAs FET was the same as that of the low-noise amplifier. The change trends of the saturation drain current and pinch-off voltage parameter of the GaAs FET were analyzed. The electrical parameters decreased firstly causing by the decrease of the channel 2DEG concentra- tion and the interface state change between gate metal and GaAs, and the electrical parameters recovered partially causing by the interface state change between gate metal and GaAs.
出处
《半导体技术》
CAS
CSCD
北大核心
2016年第2期143-147,共5页
Semiconductor Technology
