摘要
空间环境中大量带电粒子的辐射效应,特别是单粒子效应,严重威胁着空间CMOS器件的可靠性。文章首先分析了数字单粒子瞬态机理和加固技术,在此基础上,针对复杂数字ASIC电路中存在的典型结构,提出了一种适合星载复杂数字ASIC的抗辐射加固电路结构。通过对标准ASIC设计方法进行改进,给出了抗辐射加固ASIC设计流程。最后实现了一款星载ASIC的研制,流片和测试结果表明了改进的ASIC实现方法的有效性。
The radiation effects of the particles in the space environment, especially single event effects, threaten to the reliability of CMOS device. In this paper, the mechanism and hardened techniques of DSET have been analyzed firstly. Based on the analysis, a radiation-hardened circuit for the common complex digital ASIC structure was proposed, which is suitable for satellite digital ASIC design. Secondly, the standard design methodology has been improved to provide the protection of digital ASICs against the radiation environment. As a result, a radiation hardened digital ASIC for satellite application was implemented based on the improved design flow,which was shown effective by tape-outing and testing.
出处
《空间电子技术》
2015年第6期41-44,共4页
Space Electronic Technology
关键词
抗辐射加固数字ASIC
单粒子效应
单粒子瞬态
设计方法
Radiation-hardened digital
ASIC
Single event effect
Single event transient (SET)
Design methodology