摘要
目前,降低功耗已成为超大规模集成电路的一个重要的发展方向。而通过降低片上系统电源电压来降低功耗是目前普遍使用的一种方法。为了给存储器的编程、擦写过程提供高电压,必须在低电源电压的输入状态下提高电荷泵的输出电压,但也导致每级电荷泵节点电压大幅上升,使得MOS体效成为降低电荷泵输出效率的主要因素。本文设计了一种四相位电荷泵电路,消除了MOS体效应导致的阈值电压上升的影响,提高了电荷泵电路的电压增益。在相同的低电源电压下,本文所设计的电荷泵电路可以大幅的减少电荷泵的级数和所消耗的芯片面积,该电路特别适用于低电源电压下工作的嵌入式快闪存储器。
Nowadays, reducing power consumption has become an important development direction of scaling integrated circuit. By lowering the on.hip system power supply voltage to reduce the power consumption is the method commonly used at present. To provide high voltage to prgram and erase the memory array, we should increase the output voltage and the voltage gain in the condition of low supply voltage input. This paper proposes a four phase charge pump eircuit. It eliminates the MOS body effect that causes the threshold voltage rising. Besides, it improves the voltage gain of charge pump circuit and reduces the output ripple voltage of charge pump. This charge pump circuit is very useful for low-voltage embedded flash memory.
出处
《电子设计工程》
2016年第5期148-151,共4页
Electronic Design Engineering
基金
国家自然科学基金(61272105)
关键词
电荷泵
低电源电压
体效应
四相位
输出纹波
嵌入式闪存
charge pump
low supply voltage
body effect
4-phase
output ripple voltage
embedded flash
