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IGBT损耗和结温计算研究 被引量:16

Study of Calculation for IGBT Loss and Junction Temperature
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摘要 介绍了基于数学模拟方法的IGBT损耗计算模型以及计算IGBT结温所采用的等效热路模型,在此基础上提出了一种连续工作损耗和瞬时结温计算方法,并针对器件生产厂家提供的计算软件存在的限制和不足问题,开发了一款新的损耗和结温计算软件。仿真及样机实测数据证实了所述损耗和结温计算方法及计算软件的有效性。 It introduced a calculation model of IGBT loss based on mathematical simulation method and an equivalent thermal circuit model for IGBT junction temperature calculation,and then put forward a calculation method of continuous loss and instantaneous junction temperature. Considering the limit and deficiency of the calculation software provided by the device manufacturer, it developed a new calculation software. Simulation and actual prototype test data confirmed the effectiveness of the calculation method and calculation software for loss and junction temperature.
出处 《大功率变流技术》 2016年第1期30-33,52,共5页 HIGH POWER CONVERTER TECHNOLOGY
关键词 IGBT 损耗计算 结温计算 等效热路模型 计算软件 IGBT loss calculation junction temperature calculation equivalent thermal circuit model calculation software
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  • 1高艳霞,龚幼民,陈伯时.电力电子器件模型参数辨识及其有效性验证[J].电力电子,2004,2(5):35-40. 被引量:1
  • 2王建宽,崔巍,江建中.SVPWM技术的理论分析及仿真[J].微特电机,2006,34(6):15-17. 被引量:31
  • 3Lutz J, Schlangenotto H, Scheuermann U, et al. Semiconductor power devices-Physics, Characteristics, Reliability [ M ] . Heidelberg: Springer, 2011.
  • 4Lutz J. Packaging and reliability of power modules [ C ] //8^th Inter. Conf. on integrated power electronics systems(CIPS), 2014 : 17-24.
  • 5Majumdar G. Power Modules as Key Component Group for Power Electronics [ C ] //Power conversion conference. 2007.
  • 6Schneider D, Feller L, Trussel D, et al. Designing an 1GBT module packaging for high quality and reliable operation [ C ] //Int. Conf. Power Electronics, Intelligent Motion, Renewable Energy and Energy Management(PCIM), 2008.
  • 7An introduction to IGBT operation-Appficalion note, AN4503 [ EB/OL ] . [ 2014-08-01 ] http: //www. dynexpowersemiconductors.eom/ application-notes, Jul. 2002.
  • 8Calculation of junction temperature-Application note, AN4506 [ EB/OL ] . [ 2014-08-01 ] http: //www. dynexpowersemicondu- ctors.com/application-notes, Jul. 2002.
  • 9Ciappa M, Carbognani F, Fichtner W. Lifetime prediction and design of reliability tests for high-power devices in automotive applications[ J ] . IEEE Transactions on Device Material Reliability, 2003 : 191-196.
  • 10Ciappa M, Carbognani F, Cova P, et al. A novel thermomechanics- based lifetime prediction model for cycle fatigue failure mechanisms in power semiconductors [ J ] . Microelectronics Reliability, 2002, 42: 1653-1658.

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