摘要
本文研究了稀土金属钕(Nd)在1-丁基-1-甲基吡咯烷双(三氟甲磺酰)亚胺盐([BMP]Tf_2N)离子液体中的阳极行为。采用循环伏安法测定了[BMP]Tf_2N的电位窗,通过线性伏安扫描、恒电流极化以及恒电位极化研究了Nd在[BMP]Tf_2N中阳极溶解,利用恒电流溶解计算了Nd的溶解价态,最后采用SEM考察了恒电流溶解之后Nd的表面形貌。结果表明:电极电位超过1.4V(vs.Pt)之后,Nd表面氧化膜发生破坏,之后Nd电极开始活性溶解;Nd溶解之后的产物为[Nd(Tf_2N)_x]_((x-3)-);在较低的电流密度下,如0.1mA/cm^2,Nd表面氧化膜发生局部破坏,出现局部溶解的形貌;在较高的电流密度下,如1mA/cm^2,Nd表面氧化膜完全被破坏,出现均匀溶解形貌。
The anodic behavior of Nd in a 1-butyl-l-methylpyrrolidinium bis(trifluoromethylsulfonyl) amide ([BMP]TfzN) ionic liquid was studied in this paper. The potential window of the [BMP]TfzN was tested by cyclic voltammetry. The dissolution process of Nd was investigated by conducting linear sweep voltammeter, galvanostatic polarization and chonopotentiornetry. Scanning electron microscopy was used to characterize the surface morphologies of Nd after galvanostatic process. The results showed that the oxide films broke down at the potential of 1.4 V (vs. Pt) and the dissolution of Nd occurred after the film breakdown. The dissolved products were in complex form of [Nd(TfzN)x](x-3)- . After galvanostatic process at 0. lmA/cmz , the surface of Nd showed a pitting morphology due to the partial breakdown of oxide films; after galvanostatic process at lmA/cm2, however, the surface was homogeneous without any etching pits due to the overall breakdown of oxide films.
出处
《材料科学与工程学报》
CAS
CSCD
北大核心
2016年第1期12-17,24,共7页
Journal of Materials Science and Engineering
基金
国家自然科学基金(活性金属在离子液体中的阳极行为及机理研究)资助项目(51271166)