铜箔表面化学气相沉积少层石墨烯

Synthesis of Few-layer Graphene on Copper Foil Surface by CVD

利用化学气相沉积法(CVD法),在金属基底上生长大面积、少层数和高质量的石墨烯是近年来研究的热点。本研究采用CVD法,在常压高温条件下,以氩气为载体、氢气为还原气体、乙烯为碳源,在铜箔表面生长石墨烯。通过扫描电子显微图(SEM)、X射线衍射仪(XRD)和拉曼图谱(Raman)分析,发现铜箔表面质量和石墨烯的生长时间对石墨烯的层数和缺陷有较大影响。用20%的盐酸去除铜箔表面的保护膜和Cu_2O等杂质,铜箔在1000℃下退火60min可以使铜箔晶粒尺寸增大以及改善铜箔表面的形貌。研究发现生长时间为60s和90s时,制备的石墨烯薄膜对称性良好且层数较少。其中,生长时间为90s时,拉曼表征石墨烯的I_D/I_G值为0.7,表明其缺陷比较少。

Few-layer and chemical vapor deposition （CVD） high-quality graphene films synthesized on catalytic metal substrates by have generated significant interest in recent years. We synthesized graphene film on Cu foil by atmospheric pressure CVD with argon （Ar） as the carrier, hydrogen （H2） as gas and ethylene （C2 H4） as the carbon source. Using scanning electron microscopy （SEM）, X-r （XRD）, and Raman spectroscopy on graphene and Cu, we find that Cu substrate quality and significantly affects graphene growth. The pre-treatment of the Cu foil by dipping in 20 G hydroch the red ay diffr UCtlVe action growth time loric acid had been demonstrated to partially remove Cu20, and annealed in a H2 reducing atmosphere at 1000℃ to the Cu grain symmetry 2D and demonstr size and rearrange the surface morphology. The growth band and few-layer graphene films. The ID/Ic value of gra ates the fewer structure defects. times of 60s and 90s have t phene film of 90s is 0.7 which increase he good is lower