摘要
c-axis-oriented SmBa2Cu3O7（SmBCO） films have been deposited on（100）- LaA1O3（LAO）substrate by metal organic chemical vapor deposition（MOCVD） technique.The effects of deposition temperature（T（dep）） and total pressure（P（tot）） on the orientation and microstructure of SmBCO films were investigated.The orientation of SmBCO films transformed from α-axis to c-axis with increasing of T（dep） from 900 to 1 100℃.At T（dep）=1 050℃,SmBCO films had c-axis orientation and tetragon surface.At P（tot）^（dep）=400-800 Pa and T（dep）=1 050 ℃,totally c-axis-oriented SmBCO films were obtained.The R（dep） of SmBCO films increased firstly and then decreased with increasing P（tot）.The surface of SmBCO films exhibited tetragon morphology at 1 050 ℃ and400 Pa.Maximum thickness of SmBCO film deposited was 1.2μm at P（tot）= 600 Pa,and the corresponding R（dep）was 7.2 μm·h^（-1）.
c-axis-oriented SmBa2Cu3O7（SmBCO） films have been deposited on（100）- LaA1O3（LAO）substrate by metal organic chemical vapor deposition（MOCVD） technique.The effects of deposition temperature（T（dep）） and total pressure（P（tot）） on the orientation and microstructure of SmBCO films were investigated.The orientation of SmBCO films transformed from α-axis to c-axis with increasing of T（dep） from 900 to 1 100℃.At T（dep）=1 050℃,SmBCO films had c-axis orientation and tetragon surface.At P（tot）^（dep）=400-800 Pa and T（dep）=1 050 ℃,totally c-axis-oriented SmBCO films were obtained.The R（dep） of SmBCO films increased firstly and then decreased with increasing P（tot）.The surface of SmBCO films exhibited tetragon morphology at 1 050 ℃ and400 Pa.Maximum thickness of SmBCO film deposited was 1.2μm at P（tot）= 600 Pa,and the corresponding R（dep）was 7.2 μm·h^（-1）.
基金
Funded by National Natural Science Foundation of China(Nos.51102101,51272196,51372188,51521001)
the 111 Project(No.B13035)
International Science&Technology Cooperation Program of China(No.2014DFA53090)
the Natural Science Foundation of Hubei Province,China(No.2014CFB870)
the Fundamental Research Funds for the Central Universities,China(No.WUT:2015III023)
