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一种具有输出限压功能的电荷泵的设计 被引量:3

Design of a Charge Pump Circuit with Output Control
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摘要 在传统的电荷泵中,通常将更多的设计重点放在电荷泵的升压效率问题上。但是,在低电压工艺中,过高的电压会让MOS管处于被击穿的危险之中,同时,开关管的导通电阻随电源电压的变化很明显。针对上述问题,提出了一种具有输出限压功能的电荷泵。采用0.5μm UMC工艺,利用Cadence和Hspice软件进行电路设计与仿真。结果表明,当电源电压在2.7~5.5V范围内变化时,电荷泵的输出电压可控制在一定范围内,并且开关管的导通电阻变化很小。 In tradition designs of charge pump,the direction of more designs is paid on efficiency of the charge pump.But in low voltage process,excessive voltage will put MOS transistor in danger of being broken down,and the on-resistance of switch transistor will change obviously with power supply voltage.Aiming at the above problems,a charge pump circuit with output control was proposed.The charge pump was designed and simulated based on 0.5μm UMC technology library with the Cadence and Hspice software.Simulation results showed that when the power supply changed in the range of 2.7-5.5 V,the output voltage of charge pump was controlled in certain range,and the on-resistance of switch transistor changed little.
出处 《微电子学》 CAS CSCD 北大核心 2016年第1期38-40,44,共4页 Microelectronics
基金 国家高技术研究发展(863计划)重大项目(2012AA012305) 国家自然科学基金面上项目(61271090)
关键词 USB电源管理系统 电荷泵电路 输出限压 低压工艺 导通电阻 USB power management system Charge pump Output control Low voltage process On resistance
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  • 1尚晓丹,王继安,张佳,王娜,李威,龚敏.一种产生正负倍压的电荷泵的优化设计[J].微电子学,2006,36(4):522-525. 被引量:1
  • 2毕查德 拉扎维(著) 陈贵灿 程军 张瑞智 (译).模拟CMOS集成电路设计[M].西安:西安交通大学出版社,2003.151-155.
  • 3Phillip E A,Douglas R H.CMOS模拟集成电路设计[M].冯军,李智群,译.北京:电子工业出版社,2005.
  • 4Kevin L C. Universal Serial Bus (USB) Power Management [A]. Proceedings of the 1998 WESCON Conference [C]. Anaheim, CA, USA: IEEE, 1998. 194-201.
  • 5毕查德,拉扎维著.模拟CMOS集成电路设计[M].陈贵灿等译.西安:西安交通大学出版社,2005.212-221.
  • 6Fan X H, Mishra C. Single miller capacitor frequency compensation technique for low-power multistage amplifiers [J]. IEEE J Solid-State Circuits, 2005, 40(3): 584-592.
  • 7WANG Yiran, YU Zongguang. A high-efficiency cross-coupled charge pump for flash memories [C] // 2nd Int Con{ Advanced Computer Control. Shenyang, China. 2010, 3: 130-133.
  • 8SU Ling, MA Dongsheng. Design and optimization of integrated low-voltage low-power monolithic CMOS charge pumps [C] // Int Symp Power Electronics, Electrical Drives, Automation & Motion. Ischia, Italy. 2008: 43-48.
  • 9SHIN J S, CHUNG I Y, PARK Y J, et al. A new charge pump without degradation in threshold voltage due to body effect [J]. IEEE J Sol Sta Circ, 2000, 35 (8) : 1227-1230.
  • 10DICKSON J F. On-chip high-vohage generation in MNOS integrated circuits using an improved voltage multiplier technique [J]. IEEE J Sol Sta Circ, 1976, 11(3): 374-378.

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