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AlGaInP材料LED微阵列热学特性分析 被引量:5

Thermal Analysis of AlGaInP-Based LED Microarray
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摘要 发光二极管(LED)微阵列芯片在工作时积累的热量使结温过高,进而对LED微阵列芯片造成一系列不利影响,严重降低LED微阵列芯片工作的可靠性,甚至造成永久性损坏。散热问题是制约LED微阵列芯片工作性能提高的关键因素,是LED微阵列芯片在制备过程中亟待解决的问题之一。利用有限元分析软件,针对AlGaInP材料LED微阵列建立了有限元模型,详细介绍了实体模型建立、网格划分以及边界条件的施加方法。瞬态分析了在脉冲电流驱动下,单个单元和3×3单元工作时阵列的温度场分布,以及温度随时间的变化规律。为了改善阵列芯片的散热性能,设计了一种热沉结构,模拟分析了热沉结构对阵列温度分布的影响。 The accumulated heat of light emitted diode (LED) microarray chip at work will result in an excessive junction temperature, which causes a series of adverse effects on the LED microarray chip, severely reduce the reliability of LED microarray chip and even cause permanent damage. Heat dissipation is a key factor that restricts the improvement of working performance of LED microarray, making it an urgent problem to be solved in the manufacturing process of LED microarray chip. A i'mite element model of A1GaInP-based LED microarray has been built, and the way of modeling, meshing and applying of the boundary conditions has been introduced. Temperature distributions have been analyzed respectively when a single unit and 3×3 units are driven by a pulse current. In order to improve the heat dissipation performance of LED microarray, a structure of heatsink has been designed, the influence of the heatsink on temperature distribution of microarray has been analyzed.
出处 《光学学报》 EI CAS CSCD 北大核心 2016年第1期246-253,共8页 Acta Optica Sinica
基金 国家自然科学基金(61274122) 吉林省科技发展项目(20100351 20120323) 长春市科技发展计划项目(12ZX21)
关键词 光学器件 热学特性 有限元分析 发光二极管微阵列 热沉 ALGAINP optical devices thermal characteristic fmite element analysis light emitted diode microarray heatsink A1GaInP
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