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Low threshold Raman effect in high power narrowband fiber amplifier 被引量:3

Low threshold Raman effect in high power narrowband fiber amplifier
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摘要 A low-threshold Raman effect in a kilowatt ytterbium-doped narrowband fiber amplifier system is reported. The Raman Stokes light at 1120 nm is achieved with the total output power of only N400 W, indicating that the Raman threshold of this kilowatt codireetional pumped continuous wave fiber amplifier is much lower than the predicted value estimated by the classic formula. To figure out the mechanism of this phenomenon, simulations based on the general stimulated Raman scattering (SRS) model are analyzed indicating that the key factor is the coupling between four-wave mixing (FWM) and SRS. The simulation results are in good agreement with our experiments. A low-threshold Raman effect in a kilowatt ytterbium-doped narrowband fiber amplifier system is reported. The Raman Stokes light at 1120 nm is achieved with the total output power of only N400 W, indicating that the Raman threshold of this kilowatt codireetional pumped continuous wave fiber amplifier is much lower than the predicted value estimated by the classic formula. To figure out the mechanism of this phenomenon, simulations based on the general stimulated Raman scattering (SRS) model are analyzed indicating that the key factor is the coupling between four-wave mixing (FWM) and SRS. The simulation results are in good agreement with our experiments.
出处 《Chinese Optics Letters》 SCIE EI CAS CSCD 2016年第1期84-88,共5页 中国光学快报(英文版)
基金 supported in part by the Shanghai Rising-Star Program (No. 12QH1401100) the Shanghai Natural Science Foundation (No. 11ZR1441400) the NSAF Foundation of National Natural Science Foundation of China (No. U1330134) the Natural Science Foundation of China (No. 61308024)
关键词 Four wave mixing Stimulated Raman scattering Four wave mixing Stimulated Raman scattering
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