摘要
A lateral photovoltaic effect （LPE） is discovered in an LaTiO3＋8 film epitaxially grown on a （100） SrTiO3 substrate. Under the illumination of a continuous 808 nm laser beam that is focused on the LaTiO3＋δ film through the SrTiO3 substrate, the open-circuit photovoltage depends linearly on the illuminated position. The sensitivity of the LPE can be modified by the bias current. The LaTiO3＋δ film shows a stable photoelectric property under the high pressure, up to 9 MPa. These results indicate that the LaTiO3＋δ films can give rise to a potentially photoelectronic device for near-infrared position-sensitive detection in high-pressure environments.
A lateral photovoltaic effect （LPE） is discovered in an LaTiO3＋8 film epitaxially grown on a （100） SrTiO3 substrate. Under the illumination of a continuous 808 nm laser beam that is focused on the LaTiO3＋δ film through the SrTiO3 substrate, the open-circuit photovoltage depends linearly on the illuminated position. The sensitivity of the LPE can be modified by the bias current. The LaTiO3＋δ film shows a stable photoelectric property under the high pressure, up to 9 MPa. These results indicate that the LaTiO3＋δ films can give rise to a potentially photoelectronic device for near-infrared position-sensitive detection in high-pressure environments.
基金
supported by the National 973 Program of China (No. 2014CB744302)
the Specially Founded Program on National Key Scientific Instruments and Equipment Development (No. 2012YQ140005)
