基于氩气流动条件下单晶硅生长氧碳含量影响研究

Study on the effect of silicon on the growth and oxygen carbon conte nt of silicon under the condition of argon flow

对18英寸的热场内部氩气流动情况进行分析,根据其自身的流动方式、流动速度,进行科学调整,得到含有不同含量氧碳的硅单晶。利用数值模拟方法绘制完整的氩气流线图,同时对本次试验结果进行详细分析,得出氩气流场分布规律。旨在通过本文研究探究出氩气流动条件下对单晶硅生长氧碳含量的主要影响。

To 18 inches of internal thermal field argon flows is analyzed, based on its own way of flow, the flow speed, make scientific adjustment, with different content of oxygen carbon number. Using numerical simulation method is complete the argon gas flow chart, detailed analysis of the test results at the same time, the argon gas flow field distribution are obtained. Through this study to explore the argon gas flow under the condition of oxygen carbon content of the main influence for the growth of single crystal silicon.