光注入半导体激光器产生单边带效应的研究

Single-Side Band Effect Based on Optically Injected Semiconductor Laser

在光注入半导体激光器中,为了更好地利用单周期振荡的单边带效应产生光载无线通信(Ro F)系统所需的单边带光,通过数值模拟的方法研究产生单边带效应的注入条件和影响因素。通过在不同注入强度和频率失谐下仿真光注入半导体激光器的速率方程,找到了产生单边带效应的条件范围。选取弱注入与强注入两种特定情况分别研究各参数对产生单边带效应的影响。结果发现,无论是弱注入还是强注入时,单边带效应都随偏置电流和线宽增强因子的减小而更加明显。弱注入时单边带效应随频率失谐的增大而变好,而强注入时需减小频率失谐才能得到较好的单边带效应。此外,强注入时单边带效应还会随着腔衰减率的增大而增强。因此,要想获得好的单边带光,需选取合适的激光器类型与外部注入参数。

In order to produce single-side band （SSB） light needed by radio over fiber （RoF） system with the SSB effect of one-period oscillation based on an optically injected semiconductor laser, the injection conditions and influencing factors are investigated by numerical simulation method. By the rate equations of the optically injected semiconductor laser under different injection intensities and frequency detunings, the ranges of producing SSB effect are found. Two special cases of weak injection and strong injection are selected, in which the influences of various parameters on the SSB effects are researched, respectively. The results show that in the cases of weak and strong injections, SSB effects become obvious with the decrease of the normalized bias current density and linewidth enhancement factor. In the case of weak injection, the SSB effect becomes good with the increase of the frequency detuning. However, it is necessary to decrease the frequency detuning for producing the SBB effect well in the case of strong injection. In addition, SSB effect gets enhanced with the increase of the cavity decay rate in the case of strong injection. Therefore, in order to get a good SSB light, the appropriate laser type and external injection parameters should be selected.