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Si_3N_4陶瓷材料的构筑及缺陷结构研究进展 被引量:1

Research progress in synthesis and defect structure of the Si_3N_4 ceramic materials
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摘要 Si_3N_4陶瓷作为结构陶瓷,以其优越的热力学稳定性能、化学稳定性能、机械性能及低密度结构等优点,在工程施工、电子元件、电工制品等领域具有广泛的应用价值。但Si_3N_4陶瓷材料在制备过程中具有杂质增强相凝聚、大晶体凸出、多大气孔等研究瓶颈,结合实际工程应用对Si_3N_4陶瓷材料本征缺陷及电子结构进行综述。系统阐述了国内外Si_3N_4陶瓷材料的研究现状及应用前景,介绍了当前Si_3N_4陶瓷材料的合成技术、研究方法等。根据工程材料的性能要求与缺陷标准,着重展望了Si_3N_4陶瓷材料在电子元件领域的应用前景与发展方向。 As structural ceramics, the Si3N4 ceramic, because of its excellent thermodynamic stability, chemical stability, mechanical properties and the advantages of low density structure has been developed dramatically in diverse fields, such as engineering construction, electronic components, electrical products, which has the value for widespread practical application. However, the Si3N4 ceramic also possesses some drawbacks in the fields of impurities in the process of preparation, enhanced coagulation, big crystal bulge and large pores, and it could reduce the mechanical property of Si3N4 ceramic. In this study, combined with practical engineering application of Si3N4 ceramic intrinsic defects and the electronic structure are summarized. At the same time, the research progress and application prospect at domestic and foreign of Si3N4 ceramic are systematically introduced. Moreover, advanced synthetic technology and research methods are discussed, respectively. According to the performance requirements and defect standard of engineering materials, the future trend of application and development direction of Si3N4 ceramic used as electronic components are also pointed out.
出处 《电子元件与材料》 CAS CSCD 2016年第3期1-4,共4页 Electronic Components And Materials
基金 上海市教委重点项目(No.13ZZ133) 上海工程技术大学研究生创新训练项目(No.E1-0903-15-01044) 国家级大学生创新创业训练基金项目(No.201210405006 20131005023)
关键词 SI3N4陶瓷 本征缺陷 综述 电子结构 应用 机理 掺杂 Si3N4 ceramic intrinsic defect review electronic structure application mechanism doping
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