铜氧面电阻率-温度线性依赖与空穴-声子散射

Linear Dependence of Resistivity-Temperature and Holon-Phonon Scattering in Cu-O Planes

在BCS理论框架中,推导出高温铜氧化物材料中电子或空穴对间的电声作用强度T与电子费米速度成正比,与相互作用距离的平方根成反比关系,代入索末菲量子自由电子气模型的电阻率公式,计算出高温超导铜氧化物材料正常态电阻率ρab对温度成线性依赖的比例系数β≈0.4×10-6(Ω·cm·K-1),与经验结果较为一致.并用空穴-声子散射机制解释了空穴型高温超导铜氧化物正常态的电阻率随温度的线性依赖行为.

Within BCS theoretical framework, it derives that the electron-phonon coupling intensity T （temperature） in two electrons or holons in high-To materials, which is proportional to velocity of electrons and inverse to the square root of interaction length in two electrons or holons. It is computed that the proportional coefficient （ 0. 4×10^-6） of the resistivity linear rise with temperature by Sommarfold＇s free-electron gas model, the computed result in accordance with empirical values β≈（0.4-0.5）×10^-6 （Ω·cm·K^-1）. The linear dependence behaviour of resistivity variation with temperature is explained by holon-phonon scattering.