脉冲激光沉积制备MgO非晶薄膜介电性质的研究

The dielectric property of amorphous MgO film prepared by Pulsed Laser Deposition

利用脉冲激光沉积技术在高电导P-Si和绝缘体Si O2上沉积了Mg O非晶薄膜,并对Si O2上的Mg O薄膜进行了透过率及XRD表征。构造了金属-氧化物-半导体(MOS)场效应晶体管结构P-Si/Mg O/Ag,测量了其C-F曲线,计算得到K-ω曲线,通过拟合计算得到Mg O的介电常数和等效厚度,与Si O2的等效厚度进行对比发现,非晶Mg O作为高K值绝缘栅介质材料优于Si O2。

Amorphous Mg O films are deposited on high conductive P-Si and insulate Si O2 by Pulsed Laser Deposition（PLD）.The Mg O film deposited on Si O2 is investigated by X-ray diffraction（XRD） and its transmittance is measured.P-Si / Mg O / Ag is created as Metal-Oxide-Semiconductor（MOS） structure.The C-F curves are measured and K-ω curves are obtained to calculate the permittivity and the equivalent thickness of Mg O.Compared with the equivalent thickness of Si O2,the amorphous Mg O is better than Si O2 being used as high K gate dielectric material.